Datasheet NDT3055 - Fairchild Даташит Полевой транзистор, N, SMD, SOT-223 — Даташит
Наименование модели: NDT3055
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Подробное описание
Производитель: Fairchild
Описание: Полевой транзистор, N, SMD, SOT-223
Краткое содержание документа:
May 1998
NDT3055 N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features
Спецификации:
- Полярность транзистора: N Channel
- Continuous Drain Current Id: 4 А
- Drain Source Voltage Vds: 60 В
- On Resistance Rds(on): 100 МОм
- Rds(on) Test Voltage Vgs: 10 В
- Voltage Vgs Max: 3 В
- Корпус транзистора: SOT-223
- Количество выводов: 4
- SVHC: No SVHC (15-Dec-2010)
- Current Id Max: 4 А
- Тип корпуса: SOT-223
- Power Dissipation Pd: 3 Вт
- Способ монтажа: SMD
- Threshold Voltage Vgs Typ: 3 В
- Voltage Vds Typ: 60 В
- Voltage Vgs Rds on Measurement: 10 В
RoHS: Y-Ex
Дополнительные аксессуары:
- Electrolube - SMA10SL
- Roth Elektronik - RE901
- STANNOL - 574601