Datasheet RFD16N05LSM - Fairchild Даташит Полевой транзистор, N, LOGIC, D-PAK — Даташит
Наименование модели: RFD16N05LSM
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Подробное описание
Производитель: Fairchild
Описание: Полевой транзистор, N, LOGIC, D-PAK
Скачать Data SheetКраткое содержание документа:
RFD16N05L, RFD16N05LSM
Data Sheet December 2003
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
These are N-Channel logic level power MOSFETs manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.
Features
Спецификации:
- Полярность транзистора: N Channel
- Continuous Drain Current Id: 16 А
- Drain Source Voltage Vds: 50 В
- On Resistance Rds(on): 47 МОм
- Rds(on) Test Voltage Vgs: 5 В
- Voltage Vgs Max: 2 В
- Рабочий диапазон температрур: -55°C ... +175°C
- Корпус транзистора: D-PAK
- Количество выводов: 3
- SVHC: No SVHC (15-Dec-2010)
- Альтернативный тип корпуса: D-PAK
- Current Id Max: 16 А
- Current Temperature: 25°C
- Full Power Rating Temperature: 25°C
- Количество транзисторов: 1
- Тип корпуса: DPAK
- Power Dissipation Pd: 60 Вт
- Pulse Current Idm: 45 А
- SMD Marking: RFD16N05LSM
- Способ монтажа: SMD
- Threshold Voltage Vgs Typ: 2 В
- Voltage Vds Typ: 50 В
- Voltage Vgs Rds on Measurement: 10 В
- Voltage Vgs th Max: 2 В
RoHS: Y-Ex
Дополнительные аксессуары:
- Fischer Elektronik - FK 244 08 D PAK
- Fischer Elektronik - FK 244 13 D PAK
- Fischer Elektronik - WLK 5
