Datasheet BS170& - Fairchild Даташит N CHANNEL полевой транзистор, 60 В, 500 мА, TO-92 — Даташит

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Подробное описание

Производитель: Fairchild

Описание: N CHANNEL полевой транзистор, 60 В, 500 мА, TO-92

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Краткое содержание документа:
BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor
March 2010
BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Спецификации:

• Полярность транзистора: N Channel
• Continuous Drain Current Id: 500 мА
• Drain Source Voltage Vds: 60 В
• On Resistance Rds(on): 1.2 Ом
• Rds(on) Test Voltage Vgs: 10 В
• Threshold Voltage Vgs Typ: 2.1 В

RoHS: есть