Datasheet NDS332P.. - Fairchild Даташит Полевой транзистор — Даташит
Наименование модели: NDS332P..
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Подробное описание
Производитель: Fairchild
Описание: Полевой транзистор
Краткое содержание документа:
June 1997
NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
Спецификации:
- Полярность транзистора: P Channel
- Continuous Drain Current, Id: 1 А
- Drain Source Voltage, Vds: -20 В
- On Resistance, Rds(on): 0.3 Ом
- Rds(on) Test Voltage, Vgs: -4.5 В
- Threshold Voltage, Vgs Typ: -600 мВ
- Рассеиваемая мощность: 500 мВт
RoHS: есть