Datasheet IRF230 - International Rectifier Даташит Полевой транзистор, N, TO-3 — Даташит
Наименование модели: IRF230
Купить IRF230 на РадиоЛоцман.Цены — от 192 до 1 252 ₽ 17 предложений от 17 поставщиков Non-Compliant Through Hole 10 g Contains Lead 11 mm No SVHC 4 V Through Hole | |||
IRF230 Infineon | 192 ₽ | ||
IRF250 IRF230 IRF231 IRF232 IRF233 IRF234 BUZ34 BUZ36 | 865 ₽ | ||
IRF230 International Rectifier | 994 ₽ | ||
IRF230N | по запросу |
Подробное описание
Производитель: International Rectifier
Описание: Полевой транзистор, N, TO-3
Краткое содержание документа:
PD - 90334F
IRF230 REPETITIVE A ALANCHE AND dv/dt RATED V JANTX2N6758 HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 200V, N-CHANNEL
Product Summary
Part Number IRF230 BVDSS 200V RDS(on) 0.40 ID 9.0A
The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Спецификации:
- Полярность транзистора: N Channel
- Continuous Drain Current Id: 9 А
- Drain Source Voltage Vds: 200 В
- On Resistance Rds(on): 400 МОм
- Rds(on) Test Voltage Vgs: 10 В
- Voltage Vgs Max: 4 В
- Корпус транзистора: TO-3
- Количество выводов: 2
- SVHC: No SVHC (15-Dec-2010)
- Avalanche Single Pulse Energy Eas: 54mJ
- Current Iar: 9 А
- Current Id Max: 9 А
- Current Temperature: 25°C
- Fixing Centres: 30 мм
- Full Power Rating Temperature: 25°C
- Температура перехода максимальная: 150°C
- Температура перехода минимальная: -55°C
- Расстояние между выводами: 11 мм
- Количество транзисторов: 1
- Тип корпуса: TO-3
- Power Dissipation Pd: 75 Вт
- Pulse Current Idm: 36 А
- Repetitive Avalanche Energy Max: 7.5mJ
- Способ монтажа: Through Hole
- Threshold Voltage Vgs Typ: 4 В
- Voltage Vds Typ: 200 В
- Voltage Vgs Rds on Measurement: 10 В
- Voltage Vgs th Max: 4 В
- Вес: 0.01kg
Дополнительные аксессуары:
- Fischer Elektronik - AKK 191
- Fischer Elektronik - FK 201SA-3
- Fischer Elektronik - SK 04/50 SA
- Fischer Elektronik - WLK 5