Datasheet 2N6756 - International Rectifier Даташит N CH полевой транзистор, 100 В, 14 А, TO-204AA — Даташит

Купить 2N6756 на РадиоЛоцман.Цены — от 57 до 4 221 ₽ 19 предложений от 19 поставщиков Труба MOS, Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
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Подробное описание

Производитель: International Rectifier

Описание: N CH полевой транзистор, 100 В, 14 А, TO-204AA

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Краткое содержание документа:
PD - 90333F
IRF130 REPETITIVE A ALANCHE AND dv/dt RATED V JANTX2N6756 HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 100V, N-CHANNEL
Product Summary
Part Number IRF130 BVDSS 100V RDS(on) 0.18 ID 14A
The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Спецификации:

• Полярность транзистора: N Channel
• Continuous Drain Current, Id: 14 А
• Drain Source Voltage, Vds: 100 В
• On Resistance, Rds(on): 0.18 Ом
• Rds(on) Test Voltage, Vgs: 10 В
• Threshold Voltage, Vgs Typ: 4 В