Datasheet NIF62514T1G - ON Semiconductor Даташит SMART полевой транзистор, N, 42 В, 1.73 Вт, SOT-223 — Даташит
Наименование модели: NIF62514T1G
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Подробное описание
Производитель: ON Semiconductor
Описание: SMART полевой транзистор, N, 42 В, 1.73 Вт, SOT-223
Краткое содержание документа:
NIF62514
Preferred Device
Self-Protected FET with Temperature and Current Limit
HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor's latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features.
Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source Clamp.
Features http://onsemi.com
Спецификации:
- Полярность транзистора: N Channel
- Continuous Drain Current Id: 6 А
- Drain Source Voltage Vds: 40 В
- On State Resistance: 100 МОм
- Rds(on) Test Voltage Vgs: 10 В
- Voltage Vgs Max: 16 В постоянного тока
- Рабочий диапазон температрур: -55°C ... +150°C
- Корпус транзистора: SOT-223
- Количество выводов: 3
- SVHC: No SVHC (15-Dec-2010)
- Avalanche Single Pulse Energy Eas: 300mJ
- Clamping Voltage Vc Max: 40 В
- Current Id Max: 6 А
- Тип корпуса: SOT-223
- Pin Configuration: 1(G), 2(D), 3(S), 4-TAB(D)
- Power Dissipation Pd: 1.1 Вт
- Shutdown Temperature: 175°C
- Способ монтажа: SMD
- Threshold Voltage Vgs Typ: 1.7 В
- Voltage Vds Typ: 40 В
- Voltage Vgs Rds on Measurement: 10 В
- Voltage Vgs th Max: 2 В
- Voltage Vgs th Min: 1 В
RoHS: есть
Дополнительные аксессуары:
- LICEFA - V11-7-6-10
- LICEFA - V11-7
- Roth Elektronik - RE901