Datasheet MTB30P06VT4G - ON Semiconductor Даташит P CHANNEL полевой транзистор, -60 В, 30 А, D2-PAK — Даташит
Наименование модели: MTB30P06VT4G
Купить MTB30P06VT4G на РадиоЛоцман.Цены — от 103 до 299 ₽ 14 предложений от 8 поставщиков Trans MOSFET P-CH 60V 30A 3-Pin(2+Tab) D2PAK T/R | |||
| MTB30P06VT4G ON Semiconductor | 103 ₽ | ||
| MTB30P06VT4G ON Semiconductor | 128 ₽ | ||
| MTB30P06VT4G ON Semiconductor | 154 ₽ | ||
| MTB30P06VT4G ON Semiconductor | от 299 ₽ | ||
Подробное описание
Производитель: ON Semiconductor
Описание: P CHANNEL полевой транзистор, -60 В, 30 А, D2-PAK
Скачать Data SheetКраткое содержание документа:
MTB30P06V
Preferred Device
Power MOSFET 30 Amps, 60 Volts
P-Channel D2PAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Спецификации:
- Полярность транзистора: P Channel
- Continuous Drain Current Id: 30 А
- Drain Source Voltage Vds: 60 В
- On Resistance Rds(on): 80 МОм
- Rds(on) Test Voltage Vgs: 10 В
- Threshold Voltage Vgs Typ: 2.6 В
RoHS: есть
