Datasheet MTB50P03HDLT4G - ON Semiconductor Даташит P CHANNEL полевой транзистор, -30 В, 50 А, D2-PAK — Даташит
Наименование модели: MTB50P03HDLT4G
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Подробное описание
Производитель: ON Semiconductor
Описание: P CHANNEL полевой транзистор, -30 В, 50 А, D2-PAK
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MTB50P03HDL
Preferred Device
Power MOSFET 50 Amps, 30 Volts, Logic Level
P-Channel D2PAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Спецификации:
- Continuous Drain Current Id: 50 А
- Drain Source Voltage Vds: 30 В
- On Resistance Rds(on): 25 МОм
- Rds(on) Test Voltage Vgs: 5 В
- Threshold Voltage Vgs Typ: 1.5 В
- Рассеиваемая мощность: 125 Вт
RoHS: Y-Ex
