Datasheet MLD2N06CLT4G - ON Semiconductor Даташит Транзистор — Даташит
Наименование модели: MLD2N06CLT4G
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Подробное описание
Производитель: ON Semiconductor
Описание: Транзистор
Скачать Data SheetКраткое содержание документа:
MLD2N06CL
Preferred Device
SMARTDISCRETESt MOSFET 2 Amp, 62 Volts, Logic Level
N-Channel DPAK
The MLD2N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU).
Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a high in-rush current or a shorted load condition could occur. This Logic Level Power MOSFET features current limiting for short circuit protection, integrated Gate-Source clamping for ESD protection and integral Gate-Drain clamping for over-voltage protection and SENSEFETt technology for low on-resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kW gate pulldown resistor is recommended to avoid a floating gate condition. The internal Gate-Source and Gate-Drain clamps allow the device to be applied without use of external transient suppression co
Спецификации:
- Тип транзистора: MOSFET
RoHS: есть
