Datasheet MTP10N10EL - ON Semiconductor Даташит Полевой транзистор, N TO-220 — Даташит

Подробное описание

Производитель: ON Semiconductor

Описание: Полевой транзистор, N TO-220

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MTP10N10EL
Preferred Device
Power MOSFET 10 Amps, 100 Volts, Logic Level
N­Channel TO­220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.

The energy efficient design also offers a drain­to­source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. · Avalanche Energy Specified · Source­to­Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature

Данные для моделирования

Спецификации:

• Полярность транзистора: N Channel
• Continuous Drain Current Id: 10 А
• Drain Source Voltage Vds: 100 В
• On State Resistance: 220 МОм
• Корпус транзистора: TO-220AB
• Количество выводов: 3
• SVHC: No SVHC (15-Dec-2010)
• Current Id Max: 10 А
• Current Temperature: 25°C
• Full Power Rating Temperature: 25°C
• Количество транзисторов: 1
• On State Resistance Max: 220 МОм
• Тип корпуса: TO-220AB
• Power Dissipation Pd: 40 Вт
• Pulse Current Idm: 35 А
• Voltage Vgs th Max: 2 В

Дополнительные аксессуары:

• Fischer Elektronik - SK 145/37,5 STS-220
• Fischer Elektronik - SK 409/25,4 STS
• Fischer Elektronik - SK 409/50,8 STS
• Fischer Elektronik - WLK 5