Datasheet MMDF2C03HDR2G - ON Semiconductor Даташит Полевой транзистор, NP — Даташит

Купить MMDF2C03HDR2G на РадиоЛоцман.Цены — от 6.37 до 465 ₽ 19 предложений от 15 поставщиков Mosfet Array 30V 4.1A, 3A 2W Surface Mount 8-SOIC
Lixinc Electronics Весь мир	MMDF2C03HDR2G Rochester Electronics	45 ₽	Купить
Элитан Россия	MMDF2C03HDR2G ON Semiconductor	465 ₽	Купить
Контест Россия	MMDF2C03HDR2G ON Semiconductor	по запросу	Купить
Океан Электроники Россия	MMDF2C03HDR2G ON Semiconductor	по запросу	Купить

Подробное описание

Производитель: ON Semiconductor

Описание: Полевой транзистор, NP

Скачать Data Sheet

Краткое содержание документа:
MMDF2C03HD
Preferred Device
Power MOSFET 2 Amps, 30 Volts
Complementary SO-8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance.

They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

Спецификации:

• Полярность транзистора: N and P Channel
• Drain Source Voltage Vds: 30 В
• Rds(on) Test Voltage Vgs: 10 В
• Voltage Vgs Max: 1.7 В
• Корпус транзистора: SOIC
• Количество выводов: 8
• SVHC: No SVHC (15-Dec-2010)
• Cont Current Id N Channel: 4.1 А
• Cont Current Id P Channel: 3 А
• Current Id Max: 4.1 А
• On State Resistance @ Vgs = 10V N Channel: 60 МОм
• On State Resistance @ Vgs = 10V P Channel: 70 МОм
• On State Resistance @ Vgs = 4.5V N Channel: 65 МОм
• On State Resistance @ Vgs = 4.5V P Channel: 225 МОм
• Тип корпуса: SOIC-8
• Power Dissipation Pd: 2 Вт
• Pulse Current Idm N Channel: 21 А
• Pulse Current Idm P Channel: 15 А
• Способ монтажа: SMD
• Voltage Vds Typ: 30 В
• Voltage Vgs th P Channel Max: 2 В
• Voltage Vgs th P Channel Min: 1 В

RoHS: есть

Дополнительные аксессуары:

• Roth Elektronik - RE932-01