Datasheet MTB2P50ET4G - ON Semiconductor Даташит Транзистор — Даташит

Наименование модели: MTB2P50ET4G

Купить MTB2P50ET4G на РадиоЛоцман.Цены — от 124 до 187 ₽ 9 предложений от 9 поставщиков Труба MOS, Trans MOSFET P-CH 500V 2A 3Pin(2+Tab) D2PAK T/R
AiPCBA Весь мир	MTB2P50ET4G ON Semiconductor	124 ₽
Триема Россия	MTB2P50ET4G-VB	142 ₽
Lixinc Electronics Весь мир	MTB2P50ET4G ON Semiconductor	по запросу
Кремний Россия и страны СНГ	MTB2P50ET4G	по запросу

Подробное описание

Производитель: ON Semiconductor

Описание: Транзистор

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Краткое содержание документа:
MTB2P50E
Preferred Device
Power MOSFET 2 Amps, 500 Volts
P-Channel D2PAK
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Спецификации:

Полярность транзистора: P Channe

RoHS: есть