Datasheet Texas Instruments CSD16403Q5A — Даташит

CSD16403Q5A
www.ti.com SLPS201A – AUGUST 2009 – REVISED SEPTEMBER 2010 N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16403Q5A FEATURES 1 2 PRODUCT SUMMARY Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5mm x 6mm Plastic Package VDS Drain to Source Voltage Qg Gate Charge Total (4.5V) Qgd Gate Charge Gate to Drain V
nC 3.5 RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage nC VGS = 4.5V 2.9 mΩ VGS = 10V 2.2 mΩ 1.6 V ORDERING INFORMATION
Device Package Media CSD16403Q5A SON 5X6 Plastic
Package 13-inch
reel APPLICATIONS 25
13.3 Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
Optimized for Control FET Applications DESCRIPTION Qty Ship 2500 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage +16 / –12 V Continuous Drain Current, TC = 25°C 100 A Continuous Drain Current(1) 28 A The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications. ID Top View IDM Pulsed Drain Current, TA = 25В°C(2) 184 A PD Power Dissipation(1) 3.1 W S 1 8 D TJ,
TSTG Operating Junction and Storage
Temperature Range –55 to 150 °C S 2 7 D EAS Avalanche Energy, single pulse
ID = 67A, L = 0.1mH, RG = 25Ω 224 mJ S 3 6 D (1) RqJA = 41В°C/W on 1in2 Cu FR4 PCB. …