Datasheet Texas Instruments CSD16409Q3 — Даташит

CSD16409Q3
www.ti.com SLPS204A – AUGUST 2009 – REVISED MAY 2010 N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16409Q3 FEATURES 1 2 PRODUCT SUMMARY Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 3.3mm x 3.3mm Plastic Package VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 4 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance Vth Threshold Voltage nC
9.5 mΩ VGS = 10V 6.2 mΩ 2 V ORDERING INFORMATION
Device Package Media CSD16409Q3 SON 3.3 Г— 3.3
Plastic Package 13-inch
reel APPLICATIONS 1
VGS = 4.5V Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
Optimized for Control FET Applications DESCRIPTION Qty Ship 2500 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage +16 / –12 V Continuous Drain Current, TC = 25°C 60 A Continuous Drain Current(1) 15 A The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications. ID Top View IDM Pulsed Drain Current, TA = 25В°C(2) 90 A PD Power Dissipation(1) 2.6 W S 1 8 D TJ,
TSTG Operating Junction and Storage
Temperature Range –55 to 150 °C S 2 7 D EAS Avalanche Energy, single pulse
ID = 38A, L = 0.1mH, RG = 25Ω 72 mJ S 3 6 D (1) RqJA = 47В°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB. …