Datasheet Texas Instruments CSD16412Q5A — Даташит

CSD16412Q5A
SLPS207A – AUGUST 2009 – REVISED SEPTEMBER 2010 www.ti.com N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16412Q5A FEATURES 1 2 PRODUCT SUMMARY Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5mm x 6mm Plastic Package VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 2.9 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage DESCRIPTION
The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion applications.
Top View
S 1 8 D S 2 7 D 3 G 4 mΩ VGS = 10V 9 mΩ 2 V ORDERING INFORMATION Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
Optimized for Control FET Applications S nC
13 Device Package Media CSD16412Q5A SON 5 Г— 6 Plastic
Package 13-inch
reel APPLICATIONS 0.7
VGS = 4.5V 6 D 5 D Qty Ship 2500 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage +16 / –12 V Continuous Drain Current, TC = 25°C 52 A Continuous Drain Current(1) 14 A IDM Pulsed Drain Current, TA = 25°C(2) 91 A PD Power Dissipation(1) 3 W TJ,
TSTG Operating Junction and Storage …