Datasheet Vishay SUD50N04-8M8P-4GE3 — Даташит

SUD50N04-8m8P
Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
RDS(on) (О©) ID (A)a 0.0088 at VGS = 10 V 50 0.0105 at VGS = 4.5 V 50 VDS (V)
40 Qg (Typ.)
16 nC Halogen-free According to IEC 61249-2-21
Definition TrenchFETВ® Power MOSFET 100 % UIS Tested 100 % Rg Tested PWM Optimized Compliant to RoHS Directive 2002/95/EC APPLICATIONS LCD Display Backlight Inverters DC/DC Converters TO-252 D G Drain Connected to Tab
G D S Top View S Ordering Information: SUD50N04-8m8P-4GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 В°C, unless otherwise noted
Parameter Symbol
VDS
VGS Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (TJ = 150 В°C) TC = 25 В°C
TC = 70 В°C
TA = 25 В°C
TA = 70 В°C ID TC = 25 В°C
TA = 25 В°C IS Single Pulse Avalanche Current
Avalanche Energy L = 0.1 mH IAS
EAS Maximum Power Dissipation TC = 25 В°C
TC = 70 В°C
TA = 25 В°C
TA = 70 В°C PD Continuous Source-Drain Diode Current 40
В± 20 V 14b
11.2b
100 …