Datasheet Vishay Si4435DDY-T1-GE3 — Даташит

New Product Si4435DDY
Vishay Siliconix P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (О©) ID (A)d 0.024 at VGS = -10 V -11.4 0.035 at VGS = -4.5 V -9.4 VDS (V)
-30 Halogen-free According to IEC 61249-2-21
Definition TrenchFETВ® Power MOSFET Compliant to RoHS Directive 2002/95/EC Qg (Typ.)
15 nC APPLICATIONS Load Switches Battery Switch
SO-8 S S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View
D
Ordering Information: Si4435DDY-T1-E3 (Lead (Pb)-free)
Si4435DDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 В°C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (TJ = 150 В°C) Symbol
VDS
VGS
TC = 25 В°C
TC = 70 В°C
TA = 25 В°C
TA = 70 В°C Limit
-30
В± 20 ID Continuous Source-Drain Diode Current TC = 25 В°C …