Datasheet SQJ463EP-T1-GE3 - Vishay Даташит Полевой транзистор, P CH, Вт диод, 40 В, 30 А, POPAK8L — Даташит
Наименование модели: SQJ463EP-T1-GE3
 Купить SQJ463EP-T1-GE3 на РадиоЛоцман.Цены — от 42 до 11 581 ₽36 предложений от 13 поставщиков Силовой МОП-транзистор, P Канал, 40 В, 30 А, 0.008 Ом, PowerPAK SO, Surface Mount | |||
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Подробное описание
Производитель: Vishay
Описание: Полевой транзистор, P CH, Вт диод, 40 В, 30 А, POPAK8L
Скачать Data SheetКраткое содержание документа:
SPICE Device Model SQJ463EP
Vishay Siliconix
P-Channel 40 V (D-S) MOSFET
DESCRIPTION
The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS.
The subcircuit model is extracted and optimized over the - 55 °C to + 125 °C temperature ranges under the pulsed 0 V to 10 V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.
Спецификации:
- Полярность транзистора: P Channel
- Continuous Drain Current Id: -18 А
- Drain Source Voltage Vds: -40 В
- On State Resistance: 0.007 Ом
- Rds(on) Test Voltage Vgs: -10 В
- Voltage Vgs Max: -20 В
- Power Dissipation Pd: 1.9 Вт
- Рабочий диапазон температрур: -55°C ... +125°C
- Корпус транзистора: PowerPAK SO
- Количество выводов: 8
RoHS: есть
Варианты написания:
SQJ463EPT1GE3, SQJ463EP T1 GE3
