Datasheet Vishay SI4490DY-T1-GE3 — Даташит

Si4490DY
Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
VDS (V)
200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 4.0 0.090 at VGS = 6.0 V 3.8 • Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC D SO-8
S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4490DY-T1-E3 (Lead (Pb)-free)
Si4490DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C
TA = 70 °C Pulsed Drain Current
Avalanch Current L = 0.1 mH Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa ID TA = 25 °C
TA = 70 °C 4.0 2.3 IAS 15 A 2.6 1.3 3.1 1.56 2.0 1.0 TJ, Tstg Operating Junction and Storage Temperature Range 2.85
40 PD V 3.2 IDM
IS Unit -55 to 150 W
°C THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Symbol
t ≤ 10 s
Steady State
Steady State RthJA …