Datasheet Vishay SQD50N06-09L-GE3 — Даташит

SQD50N06-09L
www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) • Halogen-free According to IEC 61249-2-21
Definition 60 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.013 ID (A) • TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested 50 Configuration • Compliant to RoHS Directive 2002/95/EC Single • AEC-Q101 Qualifiedd D TO-252 G Drain Connected to Tab
G D S S Top View N-Channel MOSFET ORDERING INFORMATION
Package TO-252 Lead (Pb)-free and Halogen-free SQD50N06-09L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 TC = 25 °Ca Continuous Drain Current
Continuous Source Current (Diode ID TC = 125 °C
Conduction)a Pulsed Drain Currentb
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Maximum Power Dissipationb L = 0.1 mH
TC = 25 °C Operating Junction and Storage Temperature Range V 50
49 IS 50 IDM 200 IAS 48 EAS 115 PD TC = 125 °C UNIT 136
45 A mJ
W TJ, Tstg -55 to + 175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient PCB Mountc Junction-to-Case (Drain) RthJA 50 RthJC 1.1 °C/W Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material). …