Datasheet FDC6561AN - Fairchild Даташит Полевой транзистор, сдвоенный, NN, SUPERSOT-6 — Даташит
Наименование модели: FDC6561AN
![]() 43 предложений от 23 поставщиков Двойной МОП-транзистор, N Канал, 30 В, 2.5 А, 0.082 Ом, SuperSOT, Surface Mount | |||
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FDC6561AN ON Semiconductor | от 48 ₽ | ||
FDC6561AN Fairchild | по запросу | ||
FDC6561AN651 Fairchild | по запросу |
Подробное описание
Производитель: Fairchild
Описание: Полевой транзистор, сдвоенный, NN, SUPERSOT-6
Краткое содержание документа:
April 1999
FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET
General Description Features
2.5 A, 30 V.
RDS(ON) = 0.095 @ VGS = 10 V RDS(ON) = 0.145 @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.
Спецификации:
- Module Configuration: Dual
- Полярность транзистора: N Channel
- Continuous Drain Current Id: 2.5 А
- Drain Source Voltage Vds: 30 В
- On Resistance Rds(on): 95 МОм
- Rds(on) Test Voltage Vgs: 10 В
- Threshold Voltage Vgs Typ: 1.8 В
- Power Dissipation Pd: 960 мВт
- Корпус транзистора: SuperSOT
- Количество выводов: 6
- SVHC: No SVHC (15-Dec-2010)
- Current Id Max: 2.5 А
- Количество транзисторов: 2
- Тип корпуса: SuperSOT-6
- Способ монтажа: SMD
- Current Temperature: 25°C
- Full Power Rating Temperature: 25°C
- Pulse Current Idm: 10 А
- SMD Marking: FDC6561AN
- Uni / Bi Directional Polarity: NN
- Voltage Vds: 30 В
- Voltage Vds Typ: 30 В
- Voltage Vgs Max: 1.8 В
- Voltage Vgs Rds on Measurement: 10 В
- Voltage Vgs th Max: 3 В
RoHS: есть