Datasheet MMDF1N05ER2G - ON Semiconductor Даташит Полевой транзистор, NN — Даташит

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Производитель: ON Semiconductor

Описание: Полевой транзистор, NN

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MMDF1N05E Power MOSFET 1 Amp, 50 Volts
N-Channel SO-8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance.

They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a low reverse recovery time. MiniMOSt devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
Features http://onsemi.com
1 AMPERE, 50 VOLTS RDS(on) = 300 mW

Спецификации:

• Module Configuration: Dual
• Полярность транзистора: N Channel
• Continuous Drain Current Id: 2 А
• Drain Source Voltage Vds: 50 В
• On Resistance Rds(on): 300 МОм
• Rds(on) Test Voltage Vgs: 10 В
• Power Dissipation Pd: 2 Вт
• Корпус транзистора: SOIC
• Количество выводов: 8
• SVHC: No SVHC (15-Dec-2010)
• Current Id Max: 2 А
• Тип корпуса: SOIC
• Способ монтажа: SMD
• Voltage Vds Typ: 50 В
• Voltage Vgs Max: 3 В
• Voltage Vgs Rds on Measurement: 10 В

RoHS: есть

Дополнительные аксессуары:

• Roth Elektronik - RE932-01