Datasheet SI3552DV-T1-E3 - Vishay Даташит Сдвоенный N/P CHANNEL полевой транзистор, 30 В, TSOP — Даташит

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Подробное описание

Производитель: Vishay

Описание: Сдвоенный N/P CHANNEL полевой транзистор, 30 В, TSOP

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Краткое содержание документа:
SPICE Device Model Si3552DV Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET
CHARACTERISTICS
· N- and P-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics
DESCRIPTION
The attached spice model describes the typical electrical characteristics of the n- and p-channel vertical DMOS.

The subcircuit model is extracted and optimized over the -55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physic

Спецификации:

• Полярность транзистора: N and P Channel
• Continuous Drain Current Id: 51 А
• Drain Source Voltage Vds: 30 В
• On Resistance Rds(on): 360 МОм
• Rds(on) Test Voltage Vgs: 10 В
• Threshold Voltage Vgs Typ: 1 В

RoHS: есть

Варианты написания:

SI3552DVT1E3, SI3552DV T1 E3