Datasheet CA3127M - Intersil Даташит Транзистор ARRAY — Даташит
Наименование модели: CA3127M
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Подробное описание
Производитель: Intersil
Описание: Транзистор ARRAY
Краткое содержание документа:
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CA3127
Data Sheet June 5, 2006 FN662.5
High Frequency NPN Transistor Array
The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate.
Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual transistors and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors.
Спецификации:
- Module Configuration: Five
- Полярность транзистора: NPN
- Collector Emitter Voltage V(br)ceo: 15 В
- Power Dissipation Pd: 85 мВт
- DC Collector Current: 20 мА
- DC Current Gain: 90
- Рабочий диапазон температрур: -55°C ... +125°C
- Корпус транзистора: SOIC
- Количество выводов: 16
- SVHC: No SVHC (15-Dec-2010)
- Количество транзисторов: 5
- Тип корпуса: SOIC
- Способ монтажа: SMD
- Current Ic Continuous a Max: 20 мА