Datasheet MC1413DG - ON Semiconductor Даташит Составной транзистор Дарлингтона ARRAY, NPN, 7, 50 В, SOIC — Даташит
Наименование модели: MC1413DG
![]() 22 предложений от 19 поставщиков Массив биполярных транзисторов, дарлингтона, NPN, 50 В, 500 мА, 1000 hFE, SOIC | |||
MC1413DG Rochester Electronics | от 15 ₽ | ||
MC1413DG ON Semiconductor | 42 ₽ | ||
MC1413DG Texas Instruments | по запросу | ||
MC1413DG ON Semiconductor | по запросу |
Подробное описание
Производитель: ON Semiconductor
Описание: Составной транзистор Дарлингтона ARRAY, NPN, 7, 50 В, SOIC
Краткое содержание документа:
MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays
The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications.
Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA permit them to drive incandescent lamps. The MC1413, B with a 2.7 kW series input resistor is well suited for systems utilizing a 5.0 V TTL or CMOS Logic.
Features http://onsemi.com
16 1
PDIP-16 P SUFFIX CASE 648
Спецификации:
- Collector Emitter Voltage V(br)ceo: 50 В
- DC Collector Current: 500 мА
- DC Current Gain: 1000
- Количество выводов: 16
- Полярность транзистора: NPN
- Рабочий диапазон температрур: -20°C ... +85°C
- RoHS: да