Datasheet MUN5211DW1T1G - ON Semiconductor Даташит BRT транзистор, 50 В, 10K/10KOHM, SOT-363 — Даташит
Наименование модели: MUN5211DW1T1G
![]() 53 предложений от 22 поставщиков Биполярный цифровой/смещение транзистор, BRT, Двойной NPN, 50 В, 100 мА, 10 кОм, 10 кОм | |||
MUN5211DW1T1G ON Semiconductor | от 2.34 ₽ | ||
MUN5211DW1T1G ON Semiconductor | 6.51 ₽ | ||
MUN5211DW1T1G ON Semiconductor | от 2 250 ₽ | ||
MUN5211DW1T1G ON Semiconductor | по запросу |
Подробное описание
Производитель: ON Semiconductor
Описание: BRT транзистор, 50 В, 10K/10KOHM, SOT-363
Краткое содержание документа:
MUN5211DW1T1G Series
Preferred Devices
Dual Bias Resistor Transistors
NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor.
These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1G series, two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
Спецификации:
- Полярность транзистора: NPN
- Collector Emitter Voltage V(br)ceo: 50 В
- Power Dissipation Pd: 385 мВт
- DC Collector Current: 100 мА
- DC Current Gain Max (hfe): 60
RoHS: есть