Datasheet MUN5211DW1T1G - ON Semiconductor Даташит BRT транзистор, 50 В, 10K/10KOHM, SOT-363 — Даташит

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Подробное описание

Производитель: ON Semiconductor

Описание: BRT транзистор, 50 В, 10K/10KOHM, SOT-363

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Краткое содержание документа:
MUN5211DW1T1G Series
Preferred Devices
Dual Bias Resistor Transistors
NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor.

These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1G series, two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.

Спецификации:

• Полярность транзистора: NPN
• Collector Emitter Voltage V(br)ceo: 50 В
• Power Dissipation Pd: 385 мВт
• DC Collector Current: 100 мА
• DC Current Gain Max (hfe): 60

RoHS: есть