Datasheet MUN5311DW1T1G - ON Semiconductor Даташит BRT транзистор, 50 В, 10K/10KOHM, SC88 — Даташит
Наименование модели: MUN5311DW1T1G
 Купить MUN5311DW1T1G на РадиоЛоцман.Цены — от 1.27 до 24 ₽61 предложений от 23 поставщиков TRANS PREBIAS NPN/PNP SOT363. Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363.... | |||
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Подробное описание
Производитель: ON Semiconductor
Описание: BRT транзистор, 50 В, 10K/10KOHM, SC88
Скачать Data SheetКраткое содержание документа:
MUN5311DW1T1G Series Dual Bias Resistor Transistors
Preferred Devices
NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor.
These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1G series, two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
Features
Спецификации:
- Полярность транзистора: NPN & PNP
- Collector Emitter Voltage V(br)ceo: 50 В
- Power Dissipation Pd: 256 мВт
- DC Collector Current: 100 мА
- DC Current Gain: 60
- Рабочий диапазон температрур: -55°C ... +150°C
RoHS: есть
