Datasheet MUN5314DW1T1G - ON Semiconductor Даташит BRT транзистор, 50 В, 47K/10KOHM, SC88 — Даташит
Наименование модели: MUN5314DW1T1G
Купить MUN5314DW1T1G на РадиоЛоцман.Цены — от 0.84 до 9.84 ₽ 34 предложений от 17 поставщиков Биполярный цифровой/смещение транзистор, BRT, NPN и PNP, 50 В, 100 мА, 10 кОм, 47 кОм | |||
MUN5314DW1T1G ON Semiconductor | 0.84 ₽ | ||
MUN5314DW1T1G ON Semiconductor | 1.83 ₽ | ||
MUN5314DW1T1G ON Semiconductor | от 3.22 ₽ | ||
MUN5314DW1T1G ON Semiconductor | 6.00 ₽ |
Подробное описание
Производитель: ON Semiconductor
Описание: BRT транзистор, 50 В, 47K/10KOHM, SC88
Краткое содержание документа:
MUN5311DW1T1G Series Dual Bias Resistor Transistors
Preferred Devices
NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor.
These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1G series, two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
Features
Спецификации:
- Полярность транзистора: NPN & PNP
- Collector Emitter Voltage V(br)ceo: 50 В
- Power Dissipation Pd: 187 мВт
- DC Collector Current: -100 мА
- DC Current Gain: 140
RoHS: есть