Datasheet NTE2012 - NTE Electronics Даташит DARLINGTON ARRAY, NPN, 7, 50 В, DIP — Даташит

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Подробное описание

Производитель: NTE Electronics

Описание: DARLINGTON ARRAY, NPN, 7, 50 В, DIP

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Краткое содержание документа:
NTE2011/NTE2012/NTE2013/NTE2014/NTE2015 Integrated Circuit 7-Channel Darlington Array/Driver
Description: The NTE2011 through NTE2015 are high-voltage, high-current Darlington arrays in a 16-Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic substrate.

All units have open-collector outputs and integral diodes for inductive load transient suppression. Peak inrush currents to 600mA (NTE2011, NTE2013, NTE2014) or 750mA (NTE2012, NTE2015) are permissible, making them ideal for driving tungstun filament lamps. The NTE2011 is a general purpose array that may be used with standard bi-polar digital logic using external current limiting, or with most PMOS or CMOS directly. This device is pinned with outputs opposite inputs to facilitate printed wiring board layouts. The NTE2012 is designed for use with 14V to 25V PMOS devices. Each input has a Zener diode and resistor in series to limit the input current to a safe value in that application. The

Спецификации:

• Collector Emitter Voltage V(br)ceo: 1.3 В
• Power Dissipation Pd: 2 Вт
• DC Collector Current: 600 мА
• Рабочий диапазон температрур: -20°C ... +85°C
• Количество выводов: 16
• Continuous Collector Current Ic: 600 мА

RoHS: есть