Datasheet NTE929 - NTE Electronics Даташит Транзистор ARRAY, NPN, 5, 15 В, DIP — Даташит

Купить NTE929 на РадиоЛоцман.Цены — от 249 до 714 ₽ 6 предложений от 5 поставщиков Integrated Circuit General Purpose, High Current, NPN Transistor Array
ChipWorker Весь мир	NTE929 NTE Electronics	249 ₽	Купить
AiPCBA Весь мир	NTE929 NTE Electronics	402 ₽	Купить
Компонентс Ру Россия	NTE929 NTE Electronics	от 714 ₽	Купить
Океан Электроники Россия	NTE929 NTE Electronics	по запросу	Купить

Подробное описание

Производитель: NTE Electronics

Описание: Транзистор ARRAY, NPN, 5, 15 В, DIP

Скачать Data Sheet

Краткое содержание документа:
NTE929 Integrated Circuit General Purpose, High Current, NPN Transistor Array
Description: The NTE929 is a versatile array of five high­current (to 100mA) NPN transistors on a common monolithic substrate.

In addition, two of these transistors (Q1 and Q2) are matched at low currents (i.e. 1mA) for applications in which offset parameters are of special importance. Independent connections for each transistors plus a separate terminal for the substrate permit maximum flexibility in circuit design. Features: D High IC 100mA max D Low VCEsat (at 50mA) 0.7V max. D Matched pair (Q1 and Q2) V10 (VBE matched): ±5mV max. I10 (at 1mA): 2.5µA max. D 5 independent transistors plus separate substrate connection. Applications: D Signal processing and switching systems operating from DC to VHF D Lamp and relay driver D Differential amplifier D Temperature­compensated amplifier D Thyristor firing Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation, PD Any One Transistor .

Спецификации:

• Полярность транзистора: NPN
• Collector Emitter Voltage V(br)ceo: 15 В
• Transition Frequency Typ ft: 450 МГц
• Power Dissipation Pd: 750 мВт
• DC Collector Current: 20 мА
• DC Current Gain Max (hfe): 40