Datasheet NTE929 - NTE Electronics Даташит Транзистор ARRAY, NPN, 5, 15 В, DIP — Даташит

NTE Electronics NTE929

Наименование модели: NTE929

Купить NTE929 на РадиоЛоцман.Цены — от 431 до 50 004 ₽ Integrated Circuit General Purpose, High Current, NPN Transistor Array
ЧипСити Россия	NTE929 NTE Electronics	431 ₽
AiPCBA Весь мир	NTE929 NTE Electronics	459 ₽
T-electron Россия и страны СНГ	NTE929	50 004 ₽
Океан Электроники Россия	NTE929 NTE Electronics	по запросу

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Подробное описание

Производитель: NTE Electronics

Описание: Транзистор ARRAY, NPN, 5, 15 В, DIP

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Краткое содержание документа:
NTE929 Integrated Circuit General Purpose, High Current, NPN Transistor Array
Description: The NTE929 is a versatile array of five highcurrent (to 100mA) NPN transistors on a common monolithic substrate.

In addition, two of these transistors (Q1 and Q2) are matched at low currents (i.e. 1mA) for applications in which offset parameters are of special importance. Independent connections for each transistors plus a separate terminal for the substrate permit maximum flexibility in circuit design. Features: D High IC 100mA max D Low VCEsat (at 50mA) 0.7V max. D Matched pair (Q1 and Q2) V10 (VBE matched): ±5mV max. I10 (at 1mA): 2.5µA max. D 5 independent transistors plus separate substrate connection. Applications: D Signal processing and switching systems operating from DC to VHF D Lamp and relay driver D Differential amplifier D Temperaturecompensated amplifier D Thyristor firing Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation, PD Any One Transistor .

Спецификации:

Полярность транзистора: NPN
Collector Emitter Voltage V(br)ceo: 15 В
Transition Frequency Typ ft: 450 МГц
Power Dissipation Pd: 750 мВт
DC Collector Current: 20 мА
DC Current Gain Max (hfe): 40