Datasheet BAT54SWT1G - ON Semiconductor Даташит Диод, RECT, ARRAY, 30 В, 0.2 А, SOT323 — Даташит
Наименование модели: BAT54SWT1G
![]() 56 предложений от 22 поставщиков Диод Шоттки малого сигнала, Двойной Последовательный, 30 В, 200 мА, 800 мВ, 600 мА, 125 °C | |||
BAT54SWT1G Fairchild | 1.63 ₽ | ||
BAT54SWT1G ON Semiconductor | от 2.34 ₽ | ||
BAT54SWT1G ON Semiconductor | 6.00 ₽ | ||
BAT54SWT1G Fairchild | по запросу |
Подробное описание
Производитель: ON Semiconductor
Описание: Диод, RECT, ARRAY, 30 В, 0.2 А, SOT323
Краткое содержание документа:
BAT54SWT1G Dual Series Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
Features http://onsemi.com
· Extremely Fast Switching Speed · Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc · These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
Спецификации:
- Diode Configuration: Dual Series
- Diode Type: Schottky
- Forward Current If(AV): 200 мА
- Forward Surge Current Ifsm Max: 600 мА
- Forward Voltage VF Max: 320 мВ
- Repetitive Reverse Voltage Vrrm Max: 30 В
- Reverse Recovery Time trr Max: 5 нс
- Влагостойкость: MSL 1 - Unlimited
- Количество выводов: 3
- Рабочий диапазон температрур: -65°C ... +125°C
- Тип корпуса: SOT-323
- RoHS: да
- SVHC: No SVHC (19-Dec-2011)