Datasheet IDH10SG60C - Infineon Даташит Диод, Шоттки, 600 В, 10 А, TO220-2 — Даташит
Наименование модели: IDH10SG60C
![]() 15 предложений от 14 поставщиков Диоды Шоттки, Silicon Carbide Schottky Diode, thinQ 3G 600V Series, Single, 600V, 10A, 16NC, TO-220 | |||
IDH10SG60C Infineon | 187 ₽ | ||
IDH10SG60C Infineon | 844 ₽ | ||
IDH10SG60C D10G60C | по запросу | ||
IDH10SG60C Infineon | по запросу |
Подробное описание
Производитель: Infineon
Описание: Диод, Шоттки, 600 В, 10 А, TO220-2
Краткое содержание документа:
IDH10SG60C
3rd Generation thinQ!TM SiC Schottky Diode
Features · Revolutionary semiconductor material - Silicon Carbide · Switching behavior benchmark · No reverse recovery / No forward recovery · Temperature independent switching behavior · High surge current capability · Pb-free lead plating; RoHS compliant · Qualified according to JEDEC1) for target applications · Breakdown voltage tested at 20mA2) · Optimized for high temperature operation · Lowest Figure of Merit QC/IF Product Summary V DC QC I F; T C< 130 °C 600 16 10 V nC A
thinQ! 3G Diode designed for fast switching applications like: · SMPS e.g.; CCM PFC · Motor Drives; Solar Applications; UPS Type IDH10SG60C Package PG-TO220-2 Marking D10G60C Pin 1 C Pin 2 A
Maximum ratings Parameter Continuous forward current Symbol Conditions IF T C<130 °C T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms V RRM dv/ dt P tot T j, T stg T sold 1.6mm (0.063 in.) from case for 10s M3 a
Спецификации:
- Diode Type: Schottky
- Repetitive Reverse Voltage Vrrm Max: 600 В
- Forward Current If(AV): 10 А
- Forward Voltage VF Max: 2.1 В
- Reverse Recovery Time trr Max: 10 нс
- Forward Surge Current Ifsm Max: 51 А
- Рабочий диапазон температрур: -55°C ...
+175°C
- Тип корпуса: TO-220
- Количество выводов: 2
RoHS: есть
Дополнительные аксессуары:
- ABL HEATSINKS - LS85
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- MULTICORE (SOLDER) - 1399075-M
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