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Datasheet NCP1200 (ON Semiconductor) - 4

ПроизводительON Semiconductor
ОписаниеPWM Current-Mode Controller for Low-Power Universal Off-Line Supplies
Страниц / Страница16 / 4 — NCP1200. ELECTRICAL CHARACTERISTICS. Rating. Pin. Symbol. Min. Typ. Max. …
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Язык документаанглийский

NCP1200. ELECTRICAL CHARACTERISTICS. Rating. Pin. Symbol. Min. Typ. Max. Unit. DYNAMIC SELF−SUPPLY. INTERNAL CURRENT SOURCE. DRIVE OUTPUT

NCP1200 ELECTRICAL CHARACTERISTICS Rating Pin Symbol Min Typ Max Unit DYNAMIC SELF−SUPPLY INTERNAL CURRENT SOURCE DRIVE OUTPUT

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NCP1200 ELECTRICAL CHARACTERISTICS
(For typical values TJ = +25°C, for min/max values TJ = −25°C to +125°C, Max TJ = 150°C, VCC= 11 V unless otherwise noted)
Rating Pin Symbol Min Typ Max Unit DYNAMIC SELF−SUPPLY
(All Frequency Versions, Otherwise Noted) VCC Increasing Level at Which the Current Source Turns−off 6 VCCOFF 10.3 11.4 12.5 V VCC Decreasing Level at Which the Current Source Turns−on 6 VCCON 8.8 9.8 11 V VCC Decreasing Level at Which the Latchoff Phase Ends 6 VCClatch − 6.3 − V Internal IC Consumption, No Output Load on Pin 5 6 ICC1 − 710 880 mA Note 1 Internal IC Consumption, 1 nF Output Load on Pin 5, FSW = 40 kHz 6 ICC2 − 1.2 1.4 mA Note 2 Internal IC Consumption, 1 nF Output Load on Pin 5, FSW = 60 kHz 6 ICC2 − 1.4 1.6 mA Note 2 Internal IC Consumption, 1 nF Output Load on Pin 5, FSW = 100 kHz 6 ICC2 − 1.9 2.2 mA Note 2 Internal IC Consumption, Latchoff Phase 6 ICC3 − 350 − mA
INTERNAL CURRENT SOURCE
High−voltage Current Source, VCC = 10 V 8 IC1 2.8 4.0 − mA High−voltage Current Source, VCC = 0 V 8 IC2 − 4.9 − mA
DRIVE OUTPUT
Output Voltage Rise−time @ CL = 1 nF, 10−90% of Output Signal 5 Tr − 67 − ns Output Voltage Fall−time @ CL = 1 nF, 10−90% of Output Signal 5 Tf − 28 − ns Source Resistance (drive = 0, Vgate = VCCHMAX − 1 V) 5 ROH 27 40 61 W Sink Resistance (drive = 11 V, Vgate = 1 V) 5 ROL 5 12 25 W
CURRENT COMPARATOR
(Pin 5 Un−loaded) Input Bias Current @ 1 V Input Level on Pin 3 3 IIB − 0.02 − mA Maximum internal Current Setpoint 3 ILimit 0.8 0.9 1.0 V Default Internal Current Setpoint for Skip Cycle Operation 3 ILskip − 350 − mV Propagation Delay from Current Detection to Gate OFF State 3 TDEL − 100 160 ns Leading Edge Blanking Duration 3 TLEB − 230 − ns
INTERNAL OSCILLATOR
(VCC = 11 V, Pin 5 Loaded by 1 kW) Oscillation Frequency, 40 kHz Version − fOSC 36 42 48 kHz Oscillation Frequency, 60 kHz Version − fOSC 52 61 70 kHz Oscillation Frequency, 100 kHz Version − fOSC 86 103 116 kHz Built−in Frequency Jittering, FSW = 40 kHz − fjitter − 300 − Hz/V Built−in Frequency Jittering, FSW = 60 kHz − fjitter − 450 − Hz/V Built−in Frequency Jittering, FSW = 100 kHz − fjitter − 620 − Hz/V Maximum Duty Cycle − Dmax 74 80 87 %
FEEDBACK SECTION
(VCC = 11 V, Pin 5 Loaded by 1 kW) Internal Pullup Resistor 2 Rup − 8.0 − kW Pin 3 to Current Setpoint Division Ratio − Iratio − 4.0 − −
SKIP CYCLE GENERATION
Default skip mode level 1 Vskip 1.1 1.4 1.6 V Pin 1 internal output impedance 1 Zout − 25 − kW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Max value @ TJ = −25°C. 2. Max value @ TJ = 25°C, please see characterization curves.
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