Datasheet 2N4401 (ON Semiconductor) - 5

2N4401 h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between selected from the 2N4401 lines, and the same units were hfe and other “h” parameters for this series of transistors. To used to develop the correspondingly numbered curves on obtain these curves, a high−gain and a low−gain unit were each graph. 300 50k 2N4401 UNIT 1 200 2N4401 UNIT 2 20k 10k 100 5.0k 70 , CURRENT GAIN 2N4401 UNIT 1 50 feh 2N4401 UNIT 2 2.0k , INPUT IMPEDANCE (OHMS) ieh 30 1.0k 20 500 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain Figure 12. Input Impedance
10 100 -4 7.0 50 5.0 2N4401 UNIT 1 m TIO (X 10 ) 3.0 2N4401 UNIT 2 RA 20 2.0 ANCE ( mhos) 10 ADMITT 1.0 FEEDBACK 5.0 0.7 2N4401 UNIT 1 TAGE 0.5 2N4401 UNIT 2 oe 2.0 re 0.3 h , OUTPUT h , VOL 0.2 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance http://onsemi.com 5