ЭФО предлагает со своего склада новую серию преобразователей интерфейсов USB UART компании FTDI FT232RNL-REEL

Datasheet 2N4403 (ON Semiconductor) - 2

ПроизводительON Semiconductor
ОписаниеGeneral Purpose PNP Silicon Transistors
Страниц / Страница7 / 2 — 2N4403. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. …
Версия3
Формат / Размер файлаPDF / 121 Кб
Язык документаанглийский

2N4403. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS

2N4403 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit OFF CHARACTERISTICS ON CHARACTERISTICS

Выбираем схему BMS для заряда литий-железофосфатных (LiFePO4) аккумуляторов

Текстовая версия документа

link to page 2 link to page 2 link to page 2 link to page 2 link to page 2
2N4403 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 40 − Vdc Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 5.0 − Vdc Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV − 0.1 mAdc Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX − 0.1 mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE 30 − − (IC = 1.0 mAdc, VCE = 1.0 Vdc) 60 − (IC = 10 mAdc, VCE = 1.0 Vdc) 100 − (IC = 150 mAdc, VCE = 2.0 Vdc) (Note 1) 100 300 (IC = 500 mAdc, VCE = 2.0 Vdc) (Note 1) 20 − Collector−Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) VCE(sat) − 0.4 Vdc (IC = 500 mAdc, IB = 50 mAdc) − 0.75 Base−Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) VBE(sat) 0.75 0.95 Vdc (IC = 500 mAdc, IB = 50 mAdc) − 1.3
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 200 − MHz Collector−Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Ccb − 8.5 pF Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 30 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.5 k 15 k W Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10−4 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 60 500 − Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 100 mmhos
SWITCHING CHARACTERISTICS
Delay Time (V t CC = 30 Vdc, VBE = + 2.0 Vdc, d − 15 ns Rise Time IC = 150 mAdc, IB1 = 15 mAdc) tr − 20 ns Storage Time (V t CC = 30 Vdc, IC = 150 mAdc, s − 225 ns I Fall Time B1 = 15 mA, IB2 = 15 mA) tf − 30 ns 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION Device Package Shipping
† 2N4403 TO−92 5000 Units / Bulk 2N4403G TO−92 5000 Units / Bulk (Pb−Free) 2N4403RLRA TO−92 2000 / Tape & Reel 2N4403RLRAG TO−92 2000 / Tape & Reel (Pb−Free) 2N4403RLRM TO−92 2000 / Ammo Pack 2N4403RLRMG TO−92 2000 / Ammo Pack (Pb−Free) 2N4403RLRPG TO−92 2000 / Ammo Pack (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com 2
Электронные компоненты. Бесплатная доставка по России