Datasheet 2N4403 (ON Semiconductor) - 4
| Производитель | ON Semiconductor |
| Описание | General Purpose PNP Silicon Transistors |
| Страниц / Страница | 7 / 4 — 2N4403. Figure 5. Turn−On Time. Figure 6. Rise Time. Figure 7. Storage … |
| Версия | 3 |
| Формат / Размер файла | PDF / 121 Кб |
| Язык документа | английский |
2N4403. Figure 5. Turn−On Time. Figure 6. Rise Time. Figure 7. Storage Time. SMALL−SIGNAL CHARACTERISTICS. NOISE FIGURE
Текстовая версия документа
2N4403
100 100 70 IC/IB = 10 70 VCC = 30 V I 50 50 C/IB = 10 tr @ VCC = 30 V 30 tr @ VCC = 10 V 30 td @ VBE(off) = 2 V 20 td @ VBE(off) = 0 20 t, TIME (ns) , RISE TIME (ns) t r 10 10 7.0 7.0 5.0 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time Figure 6. Rise Time
200 IC/IB = 10 100 IC/IB = 20 70 50 , STORAGE TIME (ns)′ IB1 = IB2 t s ts′ = ts − 1/8 tf 30 20 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE
VCE = −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz 10 10 f = 1 kHz 8 8 6 IC = 1.0 mA, RS = 430 W 6 I I C = 50 mA C = 500 mA, RS = 560 W I 100 mA C = 50 mA, RS = 2.7 kW 500 mA 4 IC = 100 mA, RS = 1.6 kW 4 1.0 mA , NOISE FIGURE (dB) , NOISE FIGURE (dB) NF NF 2 RS = OPTIMUM SOURCE RESISTANCE 2 0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10k 20k 50k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)
Figure 8. Frequency Effects Figure 9. Source Resistance Effects http://onsemi.com 4
