LT3150 ELECTRICAL CHARACTERISTICSThe ● denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25 ° C.VIN1 = 1.5V, VSHDN1 = VIN1, VIN2 = 12V, GATE = 6V, IPOS = INEG = 5V, VSHDN2 = 0.75V unless otherwise noted.SYMBOLPARAMETERCONDITIONSMINTYPMAXUNITS AVOL Large-Signal Voltage Gain VGATE = 3V to 10V ● 69 84 dB VOL GATE Output Swing Low (Note 4) IGATE = 0mA ● 2.5 3 V VOH GATE Output Swing High IGATE = 0mA ● VIN2 – 1.6 VIN2 – 1 V IPOS + INEG Supply Current 3V ≤ IPOS ≤ 20V ● 0.3 0.625 1 mA Current Limit Threshold Voltage 42 50 58 mV ● 37 50 63 mV Current Limit Threshold Voltage 3V ≤ IPOS ≤ 20V ● – 0.20 – 0.50 %/V Line Regulation SHDN2 Sink Current Current Flows Into Pin ● 2.5 5.0 8.0 µA SHDN2 Source Current Current Flows Out of Pin ● – 8 – 15 – 23 µA SHDN2 Low Clamp Voltage ● 0.1 0.25 V SHDN2 High Clamp Voltage ● 1.50 1.85 2.20 V SHDN2 Threshold Voltage ● 1.18 1.21 1.240 V SHDN2 Threshold Hysteresis ● 50 100 150 mV Note 1: Absolute Maximum Ratings are those values beyond which the life Note 3: Switch current limit is guaranteed by design and/or correlation to of the device may be impaired. static test. Note 2: TJ is calculated from the ambient temperature TA and power Note 4: The VGS(th) of the external MOSFET must be greater than dissipation PD according to the following formula: 3V – VOUT. TJ = TA + (PD • 130°C/W) 3150f 3
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