Datasheet LTC3422 (Analog Devices) - 5

LTC3422
W U TYPICAL PERFOR A CE CHARACTERISTICS (TA = 25
°
C, unless otherwise specified) Burst Mode Output Current Burst Mode Output Current Threshold vs RBURST (3.3V Output) Threshold vs R FB Voltage vs Temperature BURST (5V Output)
1.217 140 VIN = 1.25V TO 2.9V 140 VIN = 1.8V TO 4.2V VOUT = 3.3V VOUT = 5V f f 120 OSC = 1MHz 120 OSC = 1MHz 1.216 100 100 80 80 1.215 ENTERS BURST (MIN) 60 60 VOLTAGE (V) ENTERS BURST (MIN) OUTPUT CURRENT (mA) 40 OUTPUT CURRENT (mA) 40 EXITS BURST (AVE) 1.214 EXITS BURST (AVE) 20 20 0 0 1.213 50 150 250 350 450 550 650 750 850 50 125 200 275 350 425 500 575 650 –45 –30 –15 0 15 30 45 60 75 90 RBURST (kΩ) RBURST (kΩ) TEMPERATURE (°C) 3422 G10 3422 G11 3422 G12
Frequency vs Temperature Burst Mode Quiescent Current (Normalized About 1MHz) vs Temperature Current Limit vs Temperature
1.02 30 2.55 1.01 µA) 28 2.50 1.00 26 2.45 CURRENT (A) FREQUENCY (MHz) 0.99 24 2.40 QUIESCENT CURRENT ( 0.98 22 2.35 –45 –30 –15 0 15 30 45 60 75 90 –45 –30 –15 0 15 30 45 60 75 90 –45 –30 –15 0 15 30 45 60 75 90 TEMPERATURE (°C) TEMPERATURE (°C) TEMPERATURE (°C) 3422 G13 3422 G14 3422 G15
RDS(ON) vs Temperature No-Load Input Current vs VIN Maximum Output Current vs VIN
280 2000 170 CHIP ENTERS fOSC = 1MHz 160 Burst Mode OPERATION 1800 260 150 1600 VOUT = 3.3V VOUT = 5V ) PMOS RDS(ON) 140 Ω 240 µA) 130 1400 120 5V DIODE 220 RECTIFICATION 110 1200 NMOS RDS(ON) 100 VOUT = 5V 1000 3.3V DIODE RESISTANCE (m 200 90 RECTIFICATION INPUT CURRENT ( 80 OUTPUT CURRENT (mA) V 800 OUT = 3.3V 180 70 600 60 160 50 400 –45 –30 –15 0 15 30 45 60 75 90 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 4.8 1.80 2.40 3.00 3.60 4.20 4.80 5.40 TEMPERATURE (°C) INPUT VOLTAGE (V) INPUT VOLTAGE (V) 3422 G16 3422 G17 3422 G18 3422fa 5