IRF520, SiHF520 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS Top 15 V 10 V 25 °C 101 8.0 V 101 7.0 V 6.0 V 175 °C 5.5 V 5.0 V Bottom 4.5 V ain Current (A) ain Current (A) 4.5 V , Dr 100 , Dr I D I D 100 20 µs Pulse Width 20 µs Pulse Width T = 25 °C V = 50 V C DS 10-1 100 101 4 5 6 7 8 9 10 91017_01 VDS, Drain-to-Source Voltage (V) 91017_03 VGS, Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, TC = 25 °CFig. 3 - Typical Transfer Characteristics 3.0 VGS I = 9.2 A D Top 15 V V = 10 V 10 V GS 2.5 101 8.0 V 7.0 V 6.0 V 2.0 5.5 V ed) 5.0 V 1.5 Bottom 4.5 V 4.5 V maliz ain Current (A) (Nor 1.0 , Dr 100 I D ain-to-Source On Resistance , Dr 0.5 20 µs Pulse Width T = 175 °C C DS(on)R 0.0 10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180 91017_02 VDS, Drain-to-Source Voltage (V) 91017_04 TJ, Junction Temperature (°C) Fig. 2 - Typical Output Characteristics, TC = 175 °CFig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91017 www.vishay.com S11-0511-Rev. B, 21-Mar-11 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
