Datasheet AD8220-EP (Analog Devices) - 5

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Enhanced Product AD8220-EP
+VS = 5 V, −VS = 0 V, VREF = 2.5 V, TA = 25°C, TOPR = −55°C to +125°C, G = 1, RL = 2 kΩ1, unless otherwise noted.
Table 2. Parameter Test Conditions/Comments Min Typ Max Unit
COMMON-MODE REJECTION RATIO (CMRR) T OPR CMRR from DC to 60 Hz with 1 kΩ Source V = 0 V to 2.5 V CM Imbalance G = 1 77 dB G = 10 92 dB G = 100 92 dB G = 1000 92 dB CMRR at 5 kHz V = 0 V to 2.5 V CM G = 1 72 dB G = 10 80 dB G = 100 80 dB G = 1000 80 dB NOISE RTI noise = √(e 2 + (e /G)2), T ni no A Voltage Noise, 1 kHz V = ±2.5 V S Input Voltage Noise, e V +, V − = 0 V, V = 0 V 14 nV/√Hz ni IN IN REF Output Voltage Noise, e V +, V − = 0 V, V = 0 V 90 nV/√Hz no IN IN REF RTI, 0.1 Hz to 10 Hz G = 1 5 µV p-p G = 1000 0.8 µV p-p Current Noise f = 1 kHz 1 fA/√Hz VOLTAGE OFFSET V = V + V /G OS OSI OSO Input Offset, V T −300 +300 µV OSI A Average TC T −10 10 µV/°C OPR Output Offset, V T −800 +800 µV OSO A Average TC T −10 +10 µV/°C OPR Offset RTI vs. Supply (PSR) T OPR G = 1 80 dB G = 10 92 dB G = 100 92 dB G = 1000 92 dB INPUT CURRENT Input Bias Current T 25 pA A Over Temperature T 100 nA OPR Input Offset Current T 2 pA A Over Temperature T 10 nA OPR DYNAMIC RESPONSE T A Small Signal Bandwidth, −3 dB G = 1 1500 kHz G = 10 800 kHz G = 100 120 kHz G = 1000 14 kHz Settling Time 0.01% T A G = 1 3 V step 2.5 µs G = 10 4 V step 2.5 µs G = 100 4 V step 7.5 µs G = 1000 4 V step 30 µs Settling Time 0.001% T A G = 1 3 V step 3.5 µs G = 10 4 V step 3.5 µs G = 100 4 V step 8.5 µs G = 1000 4 V step 37 µs Rev. 0 | Page 5 of 11 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE