Datasheet LTC5508 (Analog Devices) - 2

LTC5508
W W W U U W U ABSOLUTE AXI U RATI GS PACKAGE/ORDER I FOR ATIO (Note 1)
ORDER PART VCC, VOUT to GND .. –0.3V to 6.5V NUMBER RFIN Voltage ..(VCC ± 1.3V) to 7V TOP VIEW SHDN Voltage to GND .. –0.3V to (VCC + 0.3V) LTC5508ESC6 SHDN 1 6 RF I IN VOUT .. 5mA GND 2 5 GND Operating Temperature Range (Note 2) .. – 40°C to 85°C V 4 V OUT 3 CC Maximum Junction Temperature ... 125°C SC6 PART SC6 PACKAGE Storage Temperature Range .. – 65°C to 150°C 6-LEAD PLASTIC SC70 MARKING Lead Temperature (Soldering, 10 sec)... 300°C TJMAX = 125°C, θJA = 256°C/W LAAD Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS The
●
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. VCC = 3.6V, SHDN = VCC = HI, SHDN = 0V = LO, RF Input Signal is Off, unless otherwise noted. PARAMETER CONDITIONS MIN TYP MAX UNITS
VCC Operating Voltage ● 2.7 6 V IVCC Shutdown Current SHDN = LO ● 2 µA IVCC Operating Current SHDN = HI, IVOUT = 0mA ● 0.55 0.85 mA VOUT VOL (No RF Input) RLOAD = 2k, SHDN = HI, Enabled 150 250 400 mV SHDN = LOW, Disabled 1 mV VOUT Output Current VOUT = 1.75V, VCC = 2.7V, ∆VOUT = 10mV ● 1 2 mA VOUT Enable Time SHDN = HI, CLOAD = 33pF, RLOAD = 2k ● 8 20 µs VOUT Bandwidth CLOAD = 33pF, RLOAD = 2k (Note 4) 2 MHz VOUT Load Capacitance (Note 6) ● 33 pF VOUT Slew Rate VRFIN = 2V Step, CLOAD = 33pF, RLOAD = 2k (Note 3) 5 V/µs VOUT Noise VCC = 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination 2 mVP-P SHDN Voltage, Chip Disabled VCC = 2.7V to 6V ● 0.35 V SHDN Voltage, Chip Enabled VCC = 2.7V to 6V ● 1.4 V SHDN Input Current SHDN = 3.6V ● 24 40 µA RFIN Input Frequency Range 300 to 7000 MHz RFIN Input Power Range RF Frequency = 300MHz to 7GHz (Note 5, 6) VCC = 2.7V to 6V –32 to 12 dBm RFIN AC Input Resistance F = 1000MHz, Pin = –25dBm 150 Ω RFIN Input Shunt Capacitance F = 1000MHz, Pin = –25dBm 0.6 pF
Note 1:
Absolute Maximum Ratings are those values beyond which the life
Note 3:
The rise time at VOUT is measured between 0.5V and 1.5V. of a device may be impaired.
Note 4:
Bandwidth is calculated using the 10% to 90% rise time equation:
Note 2:
Specifications over the –40°C to 85°C operating temperature BW = 0.35/rise time. range are assured by design, characterization and correlation with
Note 5:
RF performance is tested at 1800MHz statistical process controls.
Note 6:
Guaranteed by design. 5508fa 2