LT1158 Half Bridge N-Channel Power MOSFET Driver FEATURESDESCRIPTION n Drives Gate of Top Side MOSFET Above V+ A single input pin on the LT®1158 synchronously controls n Operates at Supply Voltages from 5V to 30V two N-channel power MOSFETs in a totem pole confi gura- n 150ns Transition Times Driving 3000pF tion. Unique adaptive protection against shoot-through n Over 500mA Peak Driver Current currents eliminates all matching requirements for the two n Adaptive Non-Overlap Gate Drives MOSFETs. This greatly eases the design of high effi ciency n Continuous Current Limit Protection motor control and switching regulator systems. n Auto Shutdown and Retry Capability A continuous current limit loop in the LT1158 regulates n Internal Charge Pump for DC Operation short-circuit current in the top power MOSFET. Higher n Built-In Gate Voltage Protection start-up currents are allowed as long as the MOSFET VDS n Compatible with Current-Sensing MOSFETs does not exceed 1.2V. By returning the FAULT output to n TTL/CMOS Input Levels the enable input, the LT1158 will automatically shut down n Fault Output Indication in the event of a fault and retry when an internal pull-up current has recharged the enable capacitor. APPLICATIONS An on-chip charge pump is switched in when needed to n PWM of High Current Inductive Loads turn on the top N-channel MOSFET continuously. Special n Half Bridge and Full Bridge Motor Control circuitry ensures that the top side gate drive is safely n Synchronous Step-Down Switching Regulators maintained in the transition between PWM and DC opera- n Three-Phase Brushless Motor Drive tion. The gate-to-source voltages are internally limited to n High Current Transducer Drivers 14.5V when operating at higher supply voltages. n Battery-Operated Logic-Level MOSFETs L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. Protected by U.S. Patents including 5365118. TYPICAL APPLICATION 24V 1N4148 Top and Bottom Gate Waveforms 0.1μF BOOST DR BOOST V+ T GATE DR + IRFZ34 + 500μF 10μF V+ T GATE FB LOW ESR T SOURCE PWM + 0Hz TO INPUT SENSE+ 100kHz LT1158 RSENSE 0.015Ω ENABLE SENSE– + – LOAD 1158 TA02 V 1μF IN = 24V FAULT B GATE DR RL = 12Ω IRFZ34 BIAS B GATE FB 0.01μF GND LT1158 TA01 1158fb 1
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