Datasheet LT1158 (Analog Devices) - 5
Производитель | Analog Devices |
Описание | Half Bridge N-Channel Power MOSFET Driver |
Страниц / Страница | 22 / 5 — TYPICAL PERFORMANCE CHARACTERISTICS. Current Limit Inhibit VDS Threshold. … |
Формат / Размер файла | PDF / 250 Кб |
Язык документа | английский |
TYPICAL PERFORMANCE CHARACTERISTICS. Current Limit Inhibit VDS Threshold. Bottom Gate Rise Time. Bottom Gate Fall Time

40 предложений от 21 поставщиков IC MOSFET DRVR 1/2BRDG NCH16SOIC / Driver 0.5A 2-OUT High and Low Side Full Brdg/Half Brdg 16-Pin SOIC W Tube |
| LT1158ISW Analog Devices | 269 ₽ | |
| LT1158ISW#TR Linear Technology | 323 ₽ | |
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Текстовая версия документа
LT1158
TYPICAL PERFORMANCE CHARACTERISTICS Current Limit Inhibit VDS Threshold Bottom Gate Rise Time Bottom Gate Fall Time
1.50 400 400 1.45 V2 – V11 350 350 1.40 300 300 C 1.35 GATE = 10000pF C 250 GATE = 10000pF 250 1.30 –40°C 1.25 200 200 +25°C 1.20 +85°C 150 CGATE = 3000pF 150 CGATE = 3000pF 1.15 100 100 1.10 BOTTOM GATE RISE TIME (ns) BOTTOM GATE FALL TIME (ns) CGATE = 1000pF 50 50 1.05 CGATE = 1000pF CURRENT LIMIT INHIBIT THRESHOLD (V) 1.00 0 0 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) LT1158 G10 LT1158 G11 LT1158 G12
Top Gate Rise Time Top Gate Fall Time Transition Times vs RGate
400 400 800 V+ = 12V 350 350 700 CGATE = 3000pF C 300 GATE = 10000pF 300 600 CGATE = 10000pF 250 250 500 RISE TIME 200 200 400 CGATE = 3000pF CGATE = 3000pF FALL TIME 150 150 300 TOP GATE RISE TIME (ns) 100 TOP GATE FALL TIME (ns) 100 TRANSITION TIMES (ns) 200 C C GATE = 1000pF GATE = 1000pF 50 50 100 0 0 0 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) GATE RESISTANCE (Ω) LT1158 G13 LT1158 G14 LT1158 G15 1158fb 5