Datasheet ISL70444SEH (Intersil) - 8

link to page 9 link to page 9 ISL70444SEH Electrical Specifications VS = ±18V - Post Radiation VCM = VO = 0V, RL = Open, TA = +25°C, unless otherwise noted. Boldface limits apply across a total ionizing dose of 300krad(Si) with exposure of a high dose rate of 50 to 300rad(Si)/s and across a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. MIN MAX PARAMETER SYMBOL TEST CONDITIONS (Note 8) TYP (Note 8 UNIT Offset Voltage VOS VCM = V+ to V- 500 µV Input Offset Channel-to-Channel VOS VCM = V+ 800 µV Match VCM = V- 800 µV Input Bias Current IB VCM = V+ 650 nA VCM = V- -650 nA Input Offset Current IOS VCM = V+ to V- -50 50 nA Common-Mode Input Voltage Range VCMIR V- V+ V Common-Mode Rejection Ratio CMRR VCM = V- to V+ 70 dB VCM = V- to V+ VCM= V+ - 0.5V to V- + 0.5V dB VCM= V+ - 0.5V to V- + 0.5V 80 dB Power Supply Rejection Ratio PSRR V- = -18V; V+ = 0.5V to 18V dB V+ = 18V; V- = -0.5V to -18V 83 dB Open-Loop Gain AVOL RL = 10kΩ to ground 96 dB Output Voltage High (VOUT to V+) VOH RL = No load 160 mV RL = 10kΩ 175 mV Output Voltage Low (VOUT to V-) VOL RL = No load 150 mV RL = 10kΩ 165 mV Output Short-Circuit Current ISRC Sourcing; VIN = 0V, VOUT = -18V 10 mA Output Short-Circuit Current ISNK Sinking; VIN = 0V, VOUT = +18V 10 mA Supply Current/Amplifier IS Unity gain 2.4 mA Large Signal Slew Rate SR AV = 1, RL = 10kΩ, VO = 10VP-P 60 V/µs FN8411 Rev.4.00 Page 8 of 25 Jul 6, 2017 Document Outline Related Literature Features Applications Table of Contents Pin Configuration Pin Descriptions Ordering Information Absolute Maximum Ratings Thermal Information Recommended Operating Conditions Electrical Specifications VS = ±18V Electrical Specifications VS = ±2.5V Electrical Specifications VS = ±1.5V Electrical Specifications VS = ±18V - Post Radiation Electrical Specifications VS = ±2.5V - Post Radiation Electrical Specifications VS = ±1.5V - Post Radiation Typical Performance Curves Post High Dose Rate Radiation Characteristics Post Low Dose Rate Radiation Characteristics Applications Information Functional Description Operating Voltage Range Input Performance Input ESD Diode Protection Output Short-Circuit Current Limiting Output Phase Reversal Power Dissipation Unused Channel Configuration Die Characteristics Die Dimensions Interface Materials Glassivation Top Metallization Backside Finish Process Assembly Related Information Substrate Potential Additional Information Worst Case Current Density Transistor Count Weight of Packaged Device Lid Characteristics Metallization Mask Layout Revision History About Intersil Package Outline Drawing