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Datasheet AD8599-EP (Analog Devices) - 3

ПроизводительAnalog Devices
ОписаниеUltralow Distortion, Ultralow Noise Op Amp (Dual)
Страниц / Страница8 / 3 — Enhanced Product. AD8599-EP. SPECIFICATIONS. Table 1. Parameter. Symbol. …
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Язык документаанглийский

Enhanced Product. AD8599-EP. SPECIFICATIONS. Table 1. Parameter. Symbol. Test Conditions/Comments. Min. Typ. Max. Unit

Enhanced Product AD8599-EP SPECIFICATIONS Table 1 Parameter Symbol Test Conditions/Comments Min Typ Max Unit

Выбираем схему BMS для заряда литий-железофосфатных (LiFePO4) аккумуляторов

Модельный ряд для этого даташита

Текстовая версия документа

Enhanced Product AD8599-EP SPECIFICATIONS
VSY = ±15 V, VCM = 0 V, VO = 0 V, TA = 25°C, unless otherwise specified.
Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 10 120 µV −55°C ≤ TA ≤ +125°C 300 µV Offset Voltage Drift ΔVOS/ΔT −55°C ≤ TA ≤ +125°C 0.8 2.5 µV/°C Input Bias Current IB 25 200 nA −55°C ≤ TA ≤ +125°C 350 nA Input Offset Current IOS 50 200 nA −55°C ≤ TA ≤ +125°C 350 nA Input Voltage Range IVR −12.5 +12.5 V Common-Mode Rejection Ratio CMRR −12.5 V ≤ VCM ≤ +12.5 V 120 135 dB −55°C ≤ TA ≤ +125°C 115 dB Large Signal Voltage Gain AVO RL ≥ 600 Ω, VO = −11 V to +11 V 110 116 dB −55°C ≤ TA ≤ +125°C 106 dB Input Capacitance Differential Capacitance CDIFF 12.1 pF Common-Mode Capacitance CCM 5.1 pF OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 600 Ω 13.1 13.4 V −55°C ≤ TA ≤ +125°C 12.8 V RL = 2 kΩ 13.5 13.7 V −55°C ≤ TA ≤ +125°C 13.2 V Low VOL RL = 600 Ω −13.2 −12.9 V −55°C ≤ TA ≤ +125°C −12.8 V RL = 2 kΩ −13.5 −13.4 V −55°C ≤ TA ≤ +125°C −13.3 V Output Short-Circuit Current ISC ±52 mA Closed-Loop Output Impedance ZOUT At 1 MHz, AVO = 1 5 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VSY = ±18 V to ±4.5 V 120 140 dB −55°C ≤ TA ≤ +125°C 118 dB Supply Current per Amplifier ISY 5.0 5.7 mA −55°C ≤ TA ≤ +125°C 6.75 mA DYNAMIC PERFORMANCE Slew Rate SR AVO = −1, RL = 2 kΩ 16 V/µs AVO = 1, RL = 2 kΩ 15 V/µs Settling Time tS To 0.01%, step = 10 V 2 µs Gain Bandwidth Product GBP 10 MHz Phase Margin ΦM 65 Degrees NOISE PERFORMANCE Peak-to-Peak Noise en p-p 0.1 Hz to 10 Hz 76 nV p-p Voltage Noise Density en f = 1 kHz 1.07 1.15 nV/√Hz f = 10 Hz 1.5 nV/√Hz Correlated Current Noise f = 1 kHz 1.9 pA/√Hz f = 10 Hz 4.3 pA/√Hz Uncorrelated Current Noise f = 1 kHz 2.3 pA/√Hz f = 10 Hz 5.3 pA/√Hz Total Harmonic Distortion + Noise THD + N G = 1, RL ≥ 1 kΩ, f = 1 kHz, VRMS = 3 V −120 dB Channel Separation CS f = 10 kHz −120 dB Rev. 0 | Page 3 of 8 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS PIN CONFIGURATION GENERAL DESCRIPTION REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE POWER SEQUENCING ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE
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