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Datasheet AD8028-KGD-CHIP (Analog Devices) - 3

ПроизводительAnalog Devices
ОписаниеLow Distortion, High Speed Rail-to-Rail Input/Output Amplifier
Страниц / Страница8 / 3 — Known Good Die. AD8028-KGD-CHIP. SPECIFICATIONS. Table 1. Parameter. Test …
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Язык документаанглийский

Known Good Die. AD8028-KGD-CHIP. SPECIFICATIONS. Table 1. Parameter. Test Conditions/Comments. Min. Typ. Max. Status1. Unit

Known Good Die AD8028-KGD-CHIP SPECIFICATIONS Table 1 Parameter Test Conditions/Comments Min Typ Max Status1 Unit

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Known Good Die AD8028-KGD-CHIP SPECIFICATIONS
VS = ±5 V at TA = 25°C, RL = 1 kΩ to midsupply, G = 1, unless otherwise noted.
Table 1. Parameter Test Conditions/Comments Min Typ Max Status1 Unit
DYNAMIC PERFORMANCE –3 dB Bandwidth G = 1, VOUT = 0.2 V p-p 138 190 GBD MHz G = 1, VOUT = 2 V p-p 20 32 GBD MHz Bandwidth for 0.1 dB Flatness G = 2, VOUT = 0.2 V p-p 16 MHz Slew Rate G = +1, VOUT = 2 V step/G = −1, VOUT = 2 V step 90/100 V/µs Settling Time to 0.1% G = 2, VOUT = 2 V step 35 ns NOISE/DISTORTION PERFORMANCE Spurious-Free Dynamic Range (SFDR) fC = 1 MHz, VOUT = 2 V p-p, RF = 24.9 Ω 120 dBc fC = 5 MHz, VOUT = 2 V p-p, RF = 24.9 Ω 80 dBc Input Voltage Noise f = 100 kHz 4.3 nV/√Hz Input Current Noise f = 100 kHz 1.6 pA/√Hz Differential Gain Error NTSC, G = 2, RL = 150 Ω 0.1 % Differential Phase Error NTSC, G = 2, RL = 150 Ω 0.2 Degrees Crosstalk, Output to Output G = 1, RL = 100 Ω, VOUT = 2 V p-p, VS = ±5 V @ 1 MHz −93 dB DC PERFORMANCE Input Offset Voltage SELECT = three-state or open, PNP active 200 µV SELECT = high NPN active 240 µV Input Offset Voltage Drift TMIN to TMAX 1.50 µV/°C Input Bias Current VCM = 0 V, NPN active 4 6 Tested µA TMIN to TMAX 4 µA VCM = 0 V, PNP active −8 −11 Tested µA TMIN to TMAX −8 µA Input Offset Current ±0.1 ±0.9 Tested µA Open-Loop Gain VOUT = ±2.5 V 110 dB INPUT CHARACTERISTICS Input Impedance 6 MΩ Input Capacitance 2 pF Input Common-Mode Voltage Range −5.2 to 5.2 V Common-Mode Rejection Ratio VCM = ±2.5 V 110 dB SELECT PIN Crossover Low, Selection Input Voltage Three-state < ±20 µA −3.3 to +5 V Crossover High, Selection Input Voltage −3.9 to −3.3 V Disable Input Voltage −5 to −3.9 V Disable Switching Speed 50% of input to <10% of final VOUT 980 ns Enable Switching Speed 45 ns OUTPUT CHARACTERISTICS Output Overdrive Recovery Time VIN = +6 V to −6 V, G = −1 40/45 ns (Rising/Falling Edge) Output Voltage Swing −VS + 0.20 +VS − 0.06, +VS Tested V −Vs + 0.06 Short-Circuit Output Sinking and Sourcing 120 mA Off Isolation VIN = 0.2 V p-p, f = 1 MHz, SELECT = low −49 dB Capacitive Load Drive 30% overshoot 20 pF POWER SUPPLY Operating Range 2.7 12 V Quiescent Current/Amplifier 6.5 8.5 Tested mA Quiescent Current (Disabled) SELECT = low +VS 0.8 3 Tested mA −VS −0.9 −0.6 Tested mA Power Supply Rejection Ratio VS ± 1 V 110 dB 1 GBD is guaranteed by design. Rev. B | Page 3 of 8 Document Outline Features Applications General Description Revision History Specifications Absolute Maximum Ratings ESD Caution Pad Configuration and Function Descriptions Outline Dimensions Die Specifications and Assembly Recommendations Ordering Guide
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