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Datasheet AD8028-KGD-CHIP (Analog Devices) - 5

ПроизводительAnalog Devices
ОписаниеLow Distortion, High Speed Rail-to-Rail Input/Output Amplifier
Страниц / Страница8 / 5 — Known Good Die. AD8028-KGD-CHIP. Table 3. Parameter. Test …
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Язык документаанглийский

Known Good Die. AD8028-KGD-CHIP. Table 3. Parameter. Test Conditions/Comments. Min. Typ. Max. Status1. Unit

Known Good Die AD8028-KGD-CHIP Table 3 Parameter Test Conditions/Comments Min Typ Max Status1 Unit

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Known Good Die AD8028-KGD-CHIP
VS
=
3 V at TA = 25°C, RL = 1 kΩ to midsupply, unless otherwise noted.
Table 3. Parameter Test Conditions/Comments Min Typ Max Status1 Unit
DYNAMIC PERFORMANCE –3 dB Bandwidth G = 1, VOUT = 0.2 V p-p 125 180 GBD MHz G = 1, VOUT = 2 V p-p 19 29 GBD MHz Bandwidth for 0.1 dB Flatness G = 2, VOUT = 0.2 V p-p 10 MHz Slew Rate G = +1, VOUT = 2 V step/G = –1, VOUT = 2 V 73/100 V/µs step Settling Time to 0.1% G = 2, VOUT = 2 V step 48 ns NOISE/DISTORTION PERFORMANCE Spurious-Free Dynamic Range (SFDR) fC = 1 MHz, VOUT = 2 V p-p, RF = 24.9 Ω 85 dBc fC = 5 MHz, VOUT = 2 V p-p, RF = 24.9 Ω 64 dBc Input Voltage Noise f = 100 kHz 4.3 nV/√Hz Input Current Noise f = 100 kHz 1.6 pA/√Hz Differential Gain Error NTSC, G = 2, RL = 150 Ω 0.15 % Differential Phase Error NTSC, G = 2, RL = 150 Ω 0.20 Degrees Crosstalk, Output to Output G = 1, RL = 100 Ω, VOUT = 2 V p-p, VS = 3 V –89 dB @ 1 MHz DC PERFORMANCE Input Offset Voltage SELECT = three-state or open, PNP 200 µV active SELECT = high NPN active 240 µV Input Offset Voltage Drift TMIN to TMAX 2 µV/°C Input Bias Current VCM = 1.5 V, NPN active 4 µA TMIN to TMAX 4 µA VCM = 1.5 V, PNP active –8 µA TMIN to TMAX –8 µA Input Offset Current ±0.1 µA Open-Loop Gain VOUT = 1 V to 2 V 100 dB INPUT CHARACTERISTICS Input Impedance 6 MΩ Input Capacitance 2 pF Input Common-Mode Voltage Range RL = 1 kΩ –0.2 to +3.2 V Common-Mode Rejection Ratio VCM = 0 V to 1.5 V 100 dB SELECT PIN Crossover Low, Selection Input 1.7 to 3 V Voltage Three-state < ±20 µA Crossover High, Selection Input 1.1 to 1.7 V Voltage Disable Input Voltage 0 to 1.1 V Disable Switching Speed 50% of input to <10% of final VOUT 1150 ns Enable Switching Speed 50 ns OUTPUT CHARACTERISTICS Output Overdrive Recovery Time VIN = –1 V to +4 V, G = –1 55/55 ns (Rising/Falling Edge) Output Voltage Swing RL = 1 kΩ –VS + 0.09 +VS – 0.03, +VS Tested V –Vs + 0.03 Short-Circuit Current Sinking and sourcing 72 mA Off Isolation VIN = 0.2 V p-p, f = 1 MHz, SELECT = –49 dB low Capacitive Load Drive 30% overshoot 20 pF POWER SUPPLY Operating Range 2.7 12 GBD V Quiescent Current/Amplifier 6.0 mA Quiescent Current (Disabled) SELECT = low 300 µA Power Supply Rejection Ratio VS ± 1 V 100 dB 1 GBD is guaranteed by design. Rev. B | Page 5 of 8 Document Outline Features Applications General Description Revision History Specifications Absolute Maximum Ratings ESD Caution Pad Configuration and Function Descriptions Outline Dimensions Die Specifications and Assembly Recommendations Ordering Guide
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