AC-DC и DC-DC преобразователи напряжения Top Power на складе ЭЛТЕХ

Datasheet AD8065-KGD-CHIP (Analog Devices) - 4

ПроизводительAnalog Devices
ОписаниеHigh Performance, 145 MHzFastFET Op Amps
Страниц / Страница8 / 4 — AD8065-KGD-CHIP. Known Good Die. Table 2. Parameter. Test …
Формат / Размер файлаPDF / 182 Кб
Язык документаанглийский

AD8065-KGD-CHIP. Known Good Die. Table 2. Parameter. Test Conditions/Comments. Min. Typ. Max. Status Unit. Table 3. Parameter

AD8065-KGD-CHIP Known Good Die Table 2 Parameter Test Conditions/Comments Min Typ Max Status Unit Table 3 Parameter

60 предложений от 26 поставщиков
Микросхема Операционный усилитель, ANALOG DEVICES AD8065ARTZ-REEL7 Operational Amplifier, Single, 1 Amplifier, 145MHz, 180V/µs, 5V to 24V, SOT-23, 5Pins
Элрус
Россия
AD8065ARTZ-REEL7
Analog Devices
от 140 ₽
T-electron
Россия и страны СНГ
AD8065ARTZ-REEL7
Analog Devices
157 ₽
ICdarom.ru
Россия
AD8065ARTZ-REEL7
Analog Devices
от 346 ₽
ЭИК
Россия
AD8065ARTZ-REEL7
Analog Devices
от 548 ₽

Модельный ряд для этого даташита

Текстовая версия документа

link to page 4 link to page 4 link to page 4 link to page 4 link to page 4 link to page 4 link to page 4 link to page 4
AD8065-KGD-CHIP Known Good Die
VS = ±12 V at TA = 30°C, RL = 1 kΩ to midsupply, unless otherwise noted.
Table 2. Parameter Test Conditions/Comments Min Typ Max Status Unit
DYNAMIC PERFORMANCE −3 dB Bandwidth G = +1, VO = 0.2 V p-p 100 145 GBD1 MHz Slew Rate G = +2, VO = 4 V step 130 180 GBD1 V/µs DC PERFORMANCE Input Offset Voltage VCM = 0 V 0.4 1.5 Tested mV Input Offset Voltage Drift 1 17 GBD1 µV/°C Input Bias Current 3 pA Input Offset Current 2 pA Open-Loop Gain VO = ±10 V 103 114 Tested dB INPUT CHARACTERISTICS Input Common-Mode Voltage Range FET Input Range −12 to +8.5 −12.0 to +9.5 GBD1 V Common-Mode Rejection Ratio VCM = −1 V to +1 V −85 −100 Tested dB OUTPUT CHARACTERISTICS Output Voltage Swing RL = 1 kΩ −11.8 to +11.8 −11.9 to +11.9 Tested V POWER SUPPLY Power Supply Rejection Ratio VS ± 2 V −84 −93 Tested dB Quiescent Current per Amplifier 6.6 7.4 Tested mA 1 GBD = Guaranteed By Design. VS = +5 V at TA = 30°C, RL = 1 kΩ to midsupply, unless otherwise noted.
Table 3. Parameter Test Conditions/Comments Min Typ Max Status Unit
DYNAMIC PERFORMANCE −3 dB Bandwidth G = +1, VO = 0.2 V p-p 125 155 GBD1 MHz Slew Rate G = +2, VO = 2 V step 105 160 GBD1 V/µs DC PERFORMANCE Input Offset Voltage VCM = 1.0 V 0.4 1.5 Tested mV Input Offset Voltage Drift 1 17 GBD1 µV/°C Input Bias Current 1 pA Input Offset Current 1 pA Open-Loop Gain VO = 1 V to 4 V 100 113 Tested dB INPUT CHARACTERISTICS Input Common-Mode Voltage Range FET Input Range 0 to 1.7 0 to 2.4 GBD1 V Common-Mode Rejection Ratio VCM = 1 V to 2 V −78 −91 Tested dB OUTPUT CHARACTERISTICS Output Voltage Swing RL = 1 kΩ 0.1 to 4.85 0.03 to 4.95 Tested V POWER SUPPLY Power Supply Rejection Ratio VS ± 2 V −78 −100 Tested dB Quiescent Current per Amplifier 6.4 7.0 Tested mA 1 GBD = Guaranteed by Design. Rev. 0 | Page 4 of 8 Document Outline Features Applications General Description Revision History Specifications Absolute Maximum Ratings ESD Caution Pad Configuration and Function Descriptions Outline Dimensions Die Specifications and Assembly Recommendations Ordering Guide
ТМ Электроникс. Электронные компоненты и приборы. Скидки, кэшбэк и бесплатная доставка