Shenler: реле, интерфейсные модули

Datasheet AD8065-KGD-CHIP (Analog Devices) - 4

ПроизводительAnalog Devices
ОписаниеHigh Performance, 145 MHzFastFET Op Amps
Страниц / Страница8 / 4 — AD8065-KGD-CHIP. Known Good Die. Table 2. Parameter. Test …
Формат / Размер файлаPDF / 182 Кб
Язык документаанглийский

AD8065-KGD-CHIP. Known Good Die. Table 2. Parameter. Test Conditions/Comments. Min. Typ. Max. Status Unit. Table 3. Parameter

AD8065-KGD-CHIP Known Good Die Table 2 Parameter Test Conditions/Comments Min Typ Max Status Unit Table 3 Parameter

40 предложений от 20 поставщиков
Операционный усилитель полев. вход, вых. размах до шин питания, 145 МГц, 180 В/мкс, Uсм = 0,4 мВ, 1 мкВ/°С, 7 нВ/VГц,...
EIS Components
Весь мир
AD8065ARTZ-R2
Analog Devices
259 ₽
LifeElectronics
Россия
AD8065ARTZR2
Analog Devices
по запросу
Augswan
Весь мир
AD8065ARTZ-R2
Analog Devices
по запросу
AD8065ARTZ-R2
по запросу
Многослойные керамические конденсаторы от лидеров азиатского рынка

Модельный ряд для этого даташита

Текстовая версия документа

link to page 4 link to page 4 link to page 4 link to page 4 link to page 4 link to page 4 link to page 4 link to page 4
AD8065-KGD-CHIP Known Good Die
VS = ±12 V at TA = 30°C, RL = 1 kΩ to midsupply, unless otherwise noted.
Table 2. Parameter Test Conditions/Comments Min Typ Max Status Unit
DYNAMIC PERFORMANCE −3 dB Bandwidth G = +1, VO = 0.2 V p-p 100 145 GBD1 MHz Slew Rate G = +2, VO = 4 V step 130 180 GBD1 V/µs DC PERFORMANCE Input Offset Voltage VCM = 0 V 0.4 1.5 Tested mV Input Offset Voltage Drift 1 17 GBD1 µV/°C Input Bias Current 3 pA Input Offset Current 2 pA Open-Loop Gain VO = ±10 V 103 114 Tested dB INPUT CHARACTERISTICS Input Common-Mode Voltage Range FET Input Range −12 to +8.5 −12.0 to +9.5 GBD1 V Common-Mode Rejection Ratio VCM = −1 V to +1 V −85 −100 Tested dB OUTPUT CHARACTERISTICS Output Voltage Swing RL = 1 kΩ −11.8 to +11.8 −11.9 to +11.9 Tested V POWER SUPPLY Power Supply Rejection Ratio VS ± 2 V −84 −93 Tested dB Quiescent Current per Amplifier 6.6 7.4 Tested mA 1 GBD = Guaranteed By Design. VS = +5 V at TA = 30°C, RL = 1 kΩ to midsupply, unless otherwise noted.
Table 3. Parameter Test Conditions/Comments Min Typ Max Status Unit
DYNAMIC PERFORMANCE −3 dB Bandwidth G = +1, VO = 0.2 V p-p 125 155 GBD1 MHz Slew Rate G = +2, VO = 2 V step 105 160 GBD1 V/µs DC PERFORMANCE Input Offset Voltage VCM = 1.0 V 0.4 1.5 Tested mV Input Offset Voltage Drift 1 17 GBD1 µV/°C Input Bias Current 1 pA Input Offset Current 1 pA Open-Loop Gain VO = 1 V to 4 V 100 113 Tested dB INPUT CHARACTERISTICS Input Common-Mode Voltage Range FET Input Range 0 to 1.7 0 to 2.4 GBD1 V Common-Mode Rejection Ratio VCM = 1 V to 2 V −78 −91 Tested dB OUTPUT CHARACTERISTICS Output Voltage Swing RL = 1 kΩ 0.1 to 4.85 0.03 to 4.95 Tested V POWER SUPPLY Power Supply Rejection Ratio VS ± 2 V −78 −100 Tested dB Quiescent Current per Amplifier 6.4 7.0 Tested mA 1 GBD = Guaranteed by Design. Rev. 0 | Page 4 of 8 Document Outline Features Applications General Description Revision History Specifications Absolute Maximum Ratings ESD Caution Pad Configuration and Function Descriptions Outline Dimensions Die Specifications and Assembly Recommendations Ordering Guide
ТМ Электроникс. Электронные компоненты и приборы. Скидки, кэшбэк и бесплатная доставка